System and method for photovoltaic device temperature control while conditioning a photovoltaic device

ABSTRACT

A system and method for applying an electrical bias to a photovoltaic device in a temperature control chamber, in which the temperature of the photovoltaic device is controlled according to a temperature profile. The temperature profile may include at least one hot phase and at least one cool phase.

CLAIM OF PRIORITY

This application is a divisional of U.S. patent application Ser. No.13/836,449, filed Mar. 15, 2013, which is a continuation-in-part of, andclaims priority to, U.S. application Ser. No. 13/035,594, filed Feb. 25,2011, now U.S. Pat. No. 8,431,427, which claims priority to U.S.Provisional Patent Application No. 61/309,064, filed on Mar. 1, 2010,the entirety of each of which is hereby incorporated by reference.

TECHNICAL FIELD

This disclosure relates generally to photovoltaic devices, and morespecifically, to a system and method for conditioning photovoltaicdevices.

BACKGROUND OF THE INVENTION

Photovoltaic (PV) devices are PV cells or PV modules or any device thatconverts photo-radiation into electrical current (note that a PV moduleis made of a plurality of PV cells). Generally, a thin film PV deviceincludes two conductive electrodes sandwiching a series of semiconductorlayers. The semiconductor layers provide a p-n junction at or near whichthe photo-conversion occurs. In thin film PV devices, the p-n junctionis typically formed by an n-type window layer and a p-type absorberlayer. During operation of a thin film PC device, photons pass throughthe layers of the PV device, including the window layer, and areabsorbed by the absorber layer. The absorber layer producesphoto-generated electron-hole pairs from the photons, the movement ofwhich, promoted by a built-in electric field, produces electric currentthat can be output to other electrical devices through the twoelectrodes.

During the manufacture of PV devices, conditioning of PV devices can beused to improve the conversion efficiency of the PV device. An improvedsystem and method of conditioning PV devices during and/or aftermanufacture to achieve desired performance characteristics and productspecifications is needed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-section of a PV device.

FIG. 2 is a cross-section of a PV device.

FIG. 3 is a cross-section of a PV device.

FIG. 4 is a cross-section of a system for manufacturing a PV device.

FIG. 5A is a perspective view of a PV device during manufacture.

FIG. SB is a perspective view of a portion of a system for manufacturinga PV device.

FIG. 6 is a cross-section of a system for manufacturing a PV device.

FIG. 7 is a top-down view of a system for manufacturing a PV device.

FIG. 8 is a cross-section of a temperature control chamber according toan exemplary embodiment.

FIG. 9 is a perspective view of a temperature control chamber accordingto an exemplary embodiment.

FIG. 10 is another perspective view of a temperature control chamberaccording to an exemplary embodiment.

FIG. 11 is a process flow chart of a method of conditioning a PV deviceaccording to an exemplary embodiment.

FIG. 12 is a chart of a temperature profile according to an exemplaryembodiment.

FIG. 13 is a cross-section of a temperature control chamber according toan exemplary embodiment.

FIG. 14 is a cross-section of a temperature control chamber according toan exemplary embodiment.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown byway of illustration specific embodiments that provide a system andmethod for inline testing and conditioning of PV devices while they aremanufactured. These embodiments are described in sufficient detail toenable those skilled in the art to make and use them, and it is to beunderstood that structural, logical, or procedural changes may be madeto the specific embodiments disclosed without departing from the spiritand scope of the invention.

Thin film PV devices can include multiple layers formed on a substrate(or superstrate). For example, a PV device can include a barrier layerover a glass substrate, a transparent conductive oxide (TCO) layer overthe barrier layer, a buffer layer over the TCO layer, a semiconductorwindow layer over the buffer layer, and a semiconductor absorber layerover the window layer, all formed in a stack on the substrate. Eachlayer may in turn include more than one layer or film. Additionally,each layer can cover all or a portion of the PV device and/or all or aportion of the layer or substrate underlying the layer. For example, a“layer” can mean any amount of any material that contacts all or aportion of a surface.

Thin film solar cells such as those includingcopper-indium-gallium-selenium (CIGS), cadmium telluride (CdTe), andamorphous silicon (a-Si) as absorber layers often show changes in theircurrent-voltage behavior after light exposures of extended periods oftime (>0.5 hr-days). Some structures such as CIGS solar cells showtransient degradation that is fully reversible. Some structures such asa-Si solar cells show degradation that is not reversible, often referredto as stabilization. In CdTe solar cells, both phenomena have beenobserved where efficiency increases and stabilizes or decreases afterbrief exposure to light. Increasing the temperature of the device duringlight exposure can also accelerate these changes. A manufacture methodand related system are developed as an alternative to using lightexposure to condition and stabilize the current-voltage behavior of thinfilm PV devices, thereby improving their long term efficiency.

The application of an external electrical power supply that creates abias in the PV device can be sufficient to induce PV devicecurrent-voltage behavior changes which stabilize at a desiredcurrent-voltage behavior for long-term efficiency. The stabilizedcurrent-voltage behavior in a PV device can be achieved under a constantelectrical current load while the device is held at an elevatedtemperature. Increasing the temperature while under a constantelectrical current load can accelerate these changes. This conditioningprocess allows the PV device to reach a desired current-voltage behaviorduring the manufacturing process. Further, cooling the PV device beforeremoving the constant current load locks this desired current-voltagebehavior in place, and ensures improved efficiency.

In some embodiments, electrical biasing can be combined with alamination process, which has similar cycle times and can provide theheating required to invoke the necessary changes in current-voltagebehavior. In a lamination process, thin film PV devices can beencapsulated within the device by materials designed to seal and holdthe device together for many years and under a variety of conditions.The encapsulation material can help retain heavy metals present withinthe device by forming low solubility compounds that immobilize, chelate,adsorb, and/or fixate the cadmium and/or other heavy metals within thestructure of the device to assist with handling and disposal. Thelamination process includes heating the PV device, and pressing a PVdevice front substrate and a PV device back substrate together, with aPV device interlayer located between the front substrate and the backsubstrate. The heating of the PV device can include placing a PV deviceinterlayer in contact with PV device substrates before heating the PVdevice and pressing the back substrate and the front substrate together.The lamination process can have a duration of, for example, 1 to 60minutes, 1 to 30 minutes, 1 to 20 minutes, or 5 to 20 minutes.

The system can include a laminator configured to press a PV device frontsubstrate and a PV device back substrate together, with a PV deviceinterlayer between the front and back substrate, after a PV device isheated. The laminator can include a heater configured to heat a PVdevice to a temperature greater than 100° C. and a press configured toforce PV device layers together. The system can include a conveyor totransport a PV device from the laminator. The laminator can beconfigured to laminate a PV device for between 1 to 20 minutes.

In one aspect, a method for manufacturing a PV device can includeheating a PV device to a temperature above 100° C. and applying anelectrical bias to the heated PV device. Applying an electrical bias tothe PV device can take place after heating the PV device, or duringheating of the PV device. Additionally, applying an electrical bias tothe PV device can take place during the lamination process, or after thelamination process. Applying an electrical bias can have a durationlonger than that of heating the PV device, shorter than that of heatingthe PV device, or substantially the same as that of heating the PVdevice. Applying the electrical bias can include supplying constantcurrent with an upper voltage limit. Applying the electrical bias caninclude supplying constant voltage with an upper current limit. Theelectrical bias can generate a current that is in the range of about 0.1to about 5 times the short circuit current of the PV device 101. Thevariable voltage to sustain the current can be between about 1V andabout 200V. The step of applying the electrical bias can includeapplying the electrical bias for 1 to 60 minutes. The step of applyingthe electrical bias can include applying the electrical bias for 1 to 20minutes. The step of applying the electrical bias can include applyingthe electrical bias for 5 to 20 minutes.

Heating the PV device can include heating the PV device to a temperaturein the range of 100° to 220° C. Heating the PV device can includeheating the PV device to a temperature in the range of 120° to 180° C.Heating the PV device can include heating the PV device to a temperaturein the range of 120° to 160° C.

In one aspect, a system for manufacturing a PV device can include aconditioning station which is separate from a laminator including aheater configured to heat a PV device to a temperature greater than 100°C. and a power source configured to apply an electrical bias to the PVdevice The heater can be configured to heat a PV device to a temperaturein the range of 120° to 180° C. The power source can be configured toapply the electrical bias to a PV device subsequent to the heaterheating the PV device. The power source can be configured to apply theelectrical bias to a PV device simultaneous to the heater heating the PVdevice. The power source can be set at a constant current with an uppervoltage limit. The power source can be set at a constant voltage with anupper current limit. The electrical bias can generate a current that isin the range of 0.3-5 times of the short circuit current of the PVdevice.

Referring to FIG. 1, one example of a PV device 101 is shown. PV device101 can include front substrate 100. Front substrate 100 can include anysuitable material, including glass, for example, soda-lime glass. One ormore layers 110 can be deposited adjacent to front substrate 100, whichcan serve as a first substrate, on top of which various layers may beadded. Layer(s) 110 can include one or more device layers. For example,layer(s) 110 can include one or more thin film PV device layers. PVdevice layers can further include a transparent conductive oxide layeradjacent to substrate 100, a semiconductor window layer adjacent to thetransparent conductive oxide layer, and a semiconductor absorber layeradjacent to the semiconductor window layer. In some embodiments,layer(s) 110 can include a cadmium telluride (CdTe) absorber layer, aCIGS absorber layer, or an amorphous silicon semiconductor absorberlayer. Layer(s) 110 can include any other suitable photovoltaic absorbermaterial, including, for example, silicon.

The PV device described above can include other layers, for example, abarrier layer between the substrate and TCO layer, and a buffer layerbetween the TCO layer and window layer, and layers can be omitted fromthe PV device described. Further, layer(s) 110 can include additionalmetal layers adjacent to the semiconductor absorber layer. One or moremetal immobilizing agents can be deposited adjacent to layer(s) 110. Forexample, a metal immobilizing agent 120 can be deposited adjacent tolayer(s) 110.

Portions of semiconductor material and other coatings can be deletedfrom the edges of a PV device constructed as a PV module, which maycomprise a series of connected PV device cells. The semiconductormaterial can be removed from the edges by any suitable method. The areawhere the semiconductor material has been removed can be used toposition, form, or deposit an interlayer material adjacent to thesubstrate. Referring to FIG. 2, portions of layer(s) 110 and layer(s)120 have been removed from PV device 101 by mechanical means that caninclude laser scribing.

Referring to FIG. 3, PV device 101 can include one or more interlayers138, in contact with layer(s) 110 and layer(s) 120. A PV device 101 canalso include a back substrate 130. Back substrate 130 can include anysuitable material, including glass, for example, soda-lime glass. Backsubstrate 130 can be added to PV device 101 after the addition ofinterlayers 138. Alternatively, back substrate 130 can be added to PVdevice 101 before interlayers 138 are added. For example, back substrate130 can be positioned adjacent to layer(s) 110 and layer(s) 120 to forma space proximate to the edge portions of front substrate 100 and backsubstrate 130. Interlayer material can be positioned in this space toform interlayer 138.

The layers of PV device 101 can be aligned, heated, and bonded togetherby a lamination process. Lamination encapsulates the semiconductorlayers, TCO, metal conductor, and any other layers of PV device 101,sealing the PV devices from the environment. The front substrate 100 andthe back substrate 130 can be bonded together with interlayers 138through a lamination process. The interlayers can include athermoplastic interlayer. The thermoplastic interlayer can include anacrylonitrile butadiene styrene (ABS), an acrylic (PMMA), a celluloid, acellulose acetate, a cycloolefin copolymer (COC), a polyvinyl butyral(PVB), a silicone, an epoxy, an ethylene-vinyl acetate (EVA), anethylene vinyl alcohol (EVOH), a fluoroplastic (PTFE), an ionomer,KYDEX®, a liquid crystal polymer (LCP), a polyacetal (POM), apolyacrylate, a polyacrylonitrile (PAN), a polyamide (PA), apolyamide-imide (PAI), a polyaryletherketone (PAEK), a polybutadiene(PBD), a polybutylene (PB), a polybutylene terephthalate (PBT), apolycaprolactone (PCL), a polychlorotrifluoroethylene (PCTFE), apolyethylene terephthalate (PET), a polycyclohexylene dimethyleneterephthalate (PCT), a polycarbonate (PC), a polyhydroxyalkanoate (PHA),a polyketone (PK), a polyester, polyethylene (PE), apolyetheretherketone (PEEK), a polyetherketoneketone (PEKK), apolyetherimide (PEI), a polyethersulfone (PES), a polyethylenechlorinate(PEC), a polyimide (PI), a polylactic acid (PLA), a polymethylpentene(PMP), a polyphenylene oxide (PPO), a polyphenylene sulfide (PPS), apolyphthalamide (PPA), a polypropylene (PP), a polystyrene (PS), apolysulfone (PSU), a polytrimethylene terephthalate (PTT), apolyurethane (PU), a polyvinyl acetate (PVA), a polyvinyl chloride(PVC), a polyvinylidene chloride (PVDC), or a styrene acrylonitrile(SAN), or any other suitable material, or any combination thereof. Incertain embodiments, thermoplastic interlayer can include an ethylenevinyl acetate (EVA), a polyvinyl butyral (PVB), a silicone, or an epoxy.

Referring to FIG. 4, front substrate 100, back substrate 130 andinterlayer 138 of PV device 101 can be pressed together in laminator200, which can include a press. Laminator 200 can treat PV device 101 inlamination chamber 230 by heating from the bottom heating plate 220 oflaminator 200 that is facing front substrate 100 while the top plate 210and bottom heating plates 220 of laminator 200 press front substrate 100and back substrate 130 together. Interlayer 138 can be melted, allowedto flow and fill in gaps, and cured by this process. Lamination chamber230 can be a vacuum chamber.

In some embodiments, PV device 101 can be heated with a source ofinfrared radiation (IR) in addition to treatment in laminator 200 in thelamination process. An IR heater can be used before or after interlayer138 is added to PV device 101.

In some embodiments, the system can execute lamination and conditioning(e.g., heating and biasing of the PV device) in the same temperaturecycle. Typical lamination temperature is in the range of 120°-180° C.for a time period of 5-20 minutes.

In this system, the electrical bias can be provided through anelectrical power supply that is set at a constant current with an uppervoltage limit or at a constant voltage with an upper current limitduring the temperature cycle. The current can be in the range of 0.3-5times the short circuit current of the PV device. The current can be inthe range of 0.3-3 times the short circuit current of the PV device. Insome embodiments, the system can provide lamination of the packaging anda conditioning of the PV device during a single temperature cyclethrough the application of an electrical bias during the temperaturecycle of the lamination.

In some embodiments, the process of conditioning can occur through theapplication of electrical bias and heat after lamination. Indirect heatmay be partially or completely provided by the lamination cycle. Typicaldevice temperatures upon exit from lamination tool 200 can be 120°-160°C. and the bias can be applied while the temperature is maintained orramped down from lamination temperatures. Process times can be in therange of 1-20 minutes.

As shown in FIGS. 5A-B, the electrical bias can be applied to electricalcontacts formed on the PV device 101. FIG. 5A shows the PV device 101prior to biasing. During manufacturing of the PV devices 101, positiveand negative lead foils 410 and 411, which are electrically connected toPV cells within device 101, are brought through the PV device 101 via ahole 430 in the back substrate 130 of the PV device 101. Positive andnegative lead foils 410, 411 can be formed of any suitable material suchas, gold, silver, copper, aluminum, or other conductive metals. In anembodiment, the positive and negative lead foils 410, 411 may be formedof conductive tape.

As shown in FIG. 5B, a biasing tool 415 with a first contact 420 and asecond contact 421 can apply an electrical bias to the positive andnegative lead foils 410, 411. In an embodiment, the biasing tool 415 canbe mounted proximate to the conveyor 500, and may be capable oftranslating along, or rotating about, at least one axis. As a result,the biasing tool 415 can move and adjust to engage the positive andnegative lead foils 410, 411 of the PV device 101. In an embodiment, thebiasing tool 415 can move vertically into and out of contact with thelead foils 410, 411 located on a PV device 101. In another embodiment,the conveyor 500 can move a PV device 101 towards the stationary biasingtool 415, and stop the movement of a PV device 101 while the biasingtool 415 applies an electrical bias to a PV device 101. In anembodiment, a plurality of biasing tools 415 can apply an electricalbias to a respective plurality of PV devices 101 on the conveyor 500.The biasing tools 415 can be wired in series or in parallel to apply abias to a plurality of PV devices connected in series or in parallel.

In some embodiments, the system can provide conditioning of the PVdevice 101 after completion of the lamination cycle. The conditioningprocess can maintain cycle time of the lamination tool and the devicescan remain stationary after exit from lamination tool 200 during theprocess. No secondary heat source is required.

Applying an electrical bias to the PV device can take place before,after, or during heating of the lamination cycle. The length of applyingan electrical bias to the PV device can be longer or shorter than thatof heating of the lamination cycle. Applying an electrical bias to thePV device can have the same length of time as heating of the laminationcycle.

As shown in FIG. 7, in another embodiment, a system for manufacturing aPV device can include laminator 200, a separate conditioning station300, a biasing system 420 which includes a power source 400 and aplurality of biasing tools 415, and conveyor 500. In this embodiment,conveyor 500 can transport PV devices 101 from one or more laminators200 to the conditioning station 300 in the direction indicated by thearrow in FIG. 7. The conveyor 500 can transport the PV devices 101 intoand out of the conditioning station 300. Laminator(s) 200 can include aheater to heat a PV device and a press to laminate a PV device, asdiscussed above.

The embodiment shown in FIG. 7 can condition the PV device 101 afterlamination occurs. Referring to FIGS. 6 and 7, in an exemplaryembodiment the PV devices can be transported from one or more laminators200 by a conveyor 500 with rollers 505 to a conditioning station 300where they are held for conditioning. The heated PV devices can bepositioned by conveyor 500 in conditioning station 300, at whichelectrical contacting and biasing can occur from power source 400 andthrough biasing tools 415.

In the embodiment shown in FIG. 7, a plurality of PV devices 101 can beconnected in series or parallel and an electrical bias can be applied tothe plurality of PV devices 101. Using respective biasing tools 415(FIG. 5B) for electrical connection with a PV device 101, the biasingtools 415 can be wired to provide a series or parallel connection of PVdevices 101. As described in FIG. 5A above, positive and negative leadfoils 410, 411 can be formed on the PV device 101, and electricalcontact pads of biasing tools 415 can be applied to one lead foil pairon each PV device 101 to place the PV devices 101 either in parallel orserial connection. FIG. 7 shows a serial connection of a plurality of PVdevices 101. A high potential lead connected to the power source 400,which is part of a first biasing tool 415, can be connected to a leadfoil of the first PV device 101, and a low potential lead connected byanother biasing tool 415 to the power source 400 can be connected to alead foil of the last PV device 101. Respective biasing tools 415 areused to make the series or parallel electrical connections of aplurality of PV devices 101. Power source 400 can be used to operate thedevices in constant current or constant voltage mode.

A typical biasing process window can be a current in the range of 0.3-5times (for example, 0.3-3 times) the short circuit current of the PVdevice and a processing time of application shorter than the laminationcycle. During this time PV device 101 can be actively heated, cooled, orsimply exposed to ambient to achieve a desirable temperature profile.When devices of a previous PV device batch clear conditioning station300, the lamination cycle completes on the next PV device batch and thenext batch can enter conveyor 500 located next to conditioning station300. A plurality of PV devices can be laminated one at a time, andtransported by conveyor 500, or a plurality of laminators can eachlaminate a PV device and transport them to conditioning station 300.

As described above, conditioning of the photovoltaic modules by applyingan electrical bias can occur while the photovoltaic module is beingheated, or after the photovoltaic module has been heated. Theconditioning which occurs at conditioning station 300 after thelamination process is conducted based on the temperature of the PVdevice 101 after lamination. PV devices 101 are at an elevatedtemperature from the lamination process; if needed, additional heat maybe applied to the PV devices 101 at conditioning station 300. The PVdevice 101 that is conditioned by heating and applying an electricalbias can have about a 5-20 percent efficiency increase compared tounconditioned photovoltaic modules, for example, about a 15 percentimprovement in efficiency. In some embodiments, the method ofmanufacturing by conditioning a PV device as described can achieve areduction in the cost and time of production.

In addition, as shown in the exemplary embodiments of FIGS. 8-14, anelectrical bias by the biasing tools 415 may be applied to one or morePV devices 101 in a temperature control chamber 1000 located at theconditioning station 300 (see FIG. 7). The temperature control chamber1000 allows for precisely controlled heating of the PV device duringconditioning at the conditioning station 300. The electrical biasing ofthe PV devices 101 in the temperature control chamber 1000 may be inlieu of, or in addition to, electrical biasing that can be appliedduring another processing step, for example, inside the laminator 200.The temperature control chamber 1000 controls the temperature of the PVdevices 101 according to a temperature profile while electrical bias isapplied by the biasing tools 415. Applying electrical bias in thetemperature control chamber 1000 provides optimal thermal conditions fordevice biasing, such that the PV devices 101 are not exposed to theambient or subject to other environmental changes. It has been observedthat devices subject to electrical biasing according to a temperatureprofile using the system and method disclosed in FIGS. 8-14 possessimproved reliability and performance characteristics, for example,improved photoconversion efficiency, and can provide more consistent PVdevice performance within different device batches.

FIG. 8 illustrates the temperature control chamber 1000 according to anembodiment. The PV devices 101 are shown as connected in series bybiasing tools 415, however a single PV device 101 can also beconditioned within the temperature control chamber 1000, and a pluralityof PV devices 101 can be connected in parallel by the biasing tools 415for conditioning. The temperature control chamber 1000 can be a part ofthe PV device 101 manufacturing line or an independent chamber, used toapply an electrical bias and temperature conditioning according to atemperature profile to the PV device 101. For example, the temperatureprofile can include a plurality of phases, for example, a first hotphase and a second cool phase. The first hot phase can involve raisingor lowering the temperature of the PV devices 101 to reach and maintaina first or setpoint temperature, for example, between about 100° C. andabout 160° C. Raising or lowering the temperature of the PV devices 101can be performed at a constant rate, or at a variable rate. The secondcool phase can involve lowering the first or setpoint temperature of thePV devices 101 to reach and maintain a second temperature, for example,between about 80° C. and about 100° C. Lowering the temperature of thePV devices 101 can be performed at a constant rate, or at a variablerate. When the measured temperature of the PV devices 101 is at thesecond temperature, electrical biasing may be stopped. The temperatureprofile may also include temperature change rates over a specific timeperiod during the hot and cool phases to achieve the first and secondtemperatures. The temperature profile may be predetermined based onproduct specifications or other parameters. One example of a temperatureprofile is discussed below with reference to FIGS. 11 and 12. Thetemperature control chamber 1000 may control the temperature of the PVdevices 101 based on temperature feedback from the PV devices 101.Measuring the temperature of the PV devices can be performed by anyknown temperature measurement device, for example, using a radiationpyrometer.

In the FIG. 8 embodiment, a heat source 600, for example, one or moreheater panels, is located above the PV devices 101 inside thetemperature control chamber 1000. The heat source 600 can provideconvective heat in close proximity to the PV devices 101, as shown inFIG. 8. Alternatively, the heat source 600 can provide conductive heatin direct contact with the PV devices 101, as described in more detailbelow with respect to FIG. 10. If the temperature control chamber 1000is part of a PV device manufacturing line, a conveyor 500, which may beformed of a series of rollers 505, may transport the PV devices 101through processing stations at desired traverse speeds. Multiple PVdevices 101 can be transported on conveyor 500 at once, and placed intemperature control chamber 1000. The motion of conveyor 500 can bestopped at desired times to position the PV devices 101 at desiredlocations. An insulator 700, for example, one or more insulator panels,can be located below conveyor 500 inside the temperature control chamber1000 to help control a temperature of the PV device 101. The insulator700 may be located as close as possible to the conveyor 500 withoutrestricting its motion. The insulator 700 can include an insulationpanel made of, for example, ¼ inch of insulation on a ¼ inch supportboard. At least one heat source 600 and at least one insulator 700 canbe positioned within the temperature control chamber 1000. In anembodiment, insulator 700 can be movable, for example, raised andlowered, in a manner similar to heat source 600, which is described inmore detail below with respect to FIG. 9.

FIG. 8 also illustrates power source 400 used to power biasing tools 415for application of an electrical bias to the PV devices 101, asdescribed with respect to FIG. 7. An intelligent control system 905 caninterface with an actuator 900, described with respect to FIG. 9, toposition the heat source 600 relative to the PV devices 101. The controlsystem 905 can also determine and supply the power to the heat source600 required to bring the PV devices 101 to the appropriate temperatureand control and maintain the temperature of the PV devices 101.Furthermore, the intelligent control system 905 can optionally positionthe insulator 700 via an actuator in order to bring the PV devices 101to the appropriate temperature. In an embodiment, the intelligentcontrol system 905 can coordinate and control the monitoring thetemperature of the PV devices 101, the maintenance of the temperatureprofile, as well as the actuation and positioning of the heat source 600or insulator 700.

FIG. 9 shows a perspective view of the temperature control chamber 1000,according to an embodiment. As shown in FIG. 9, the heat source 600within the temperature control chamber 1000 can be moved, for example,raised and lowered, relative to the PV devices 101 by an actuator 900.The actuator 900 is connected to the heat source 600. The actuator 900is supported by one or more actuator support members 910. Actuator 900can include one or more guided cylinders, which can comprise aircylinders, linear cylinders, or any other actuation means. The heatsource 600 can be supported by one or more heat source support members911. The heat source 600 can be positioned to contact with or be spacedfrom the back substrate 130 (the back substrate 130 is shown in FIG. 3)of the PV device 101. Alternatively, the heat source 600 can bepositioned to contact with or be spaced from the front substrate 100(the front substrate 100 is shown in FIG. 3) of the PV device 101. Forexample, when convective heat is applied to the PV devices 101, the heatsource 600 can be raised a distance (d), for example, between about 1and about 2 inches away from the PV device 101. Alternatively, whenconductive heat is applied to the PV devices 101, the heat source 600can be placed in contact with the PV devices 101. The heat source 600can also be raised to reduce the temperature of the PV device 101, andcan be raised and turned off to cool the PV device 101. The heat source600 can have a power density of between about 1 and about 5 W/in². Thepower density of heat source 600 can be a function of the amount ofinsulator 700 is used. The insulator 700 may also be actuated by anactuator to be positioned a desired distance relative to the PV device101, similar to actuator 900 for the heat source 600. As shown in FIG.9, cutouts 601 in the heat source 600 can be formed to allow the biasingtools 415 to connect with the lead foils 410, 411 of respective PVdevices 101.

FIG. 10 illustrates another perspective view of the temperature controlchamber 1000. The temperature control chamber 1000 of FIG. 10 is thesame as that of FIGS. 8 and 9, except that FIG. 10 shows the heat source600 and a cooling source 800. The cooling source 800, for example, oneor more electrical fans, may be located within the temperature controlchamber 1000. The cooling source 800 can be placed near the PV device101 to cool the PV device 101 during the cool phase. As shown in FIG.10, the cooling source 800 can be placed on one or more sides of the PVdevices 101 to cool the PV devices 101 by forced air convection withcooling air flow traveling in a direction parallel to a surface of thePV devices 101. Cooling source 800 can be fixed in one position, withcontrol system 905 adjusting power to the cooling source 800. In analternative embodiment, the cooling source 800 can be mounted proximateto the conveyor 500, and may be capable of translating along, orrotating about, at least one axis, and control system 905 can adjust theposition of cooling source 800. At least one cooling source 800 may bepositioned within the temperature control chamber 1000.

FIG. 11 illustrates a process flow chart of a method of conditioning thePV device 101, according to an embodiment. The method of conditioningcan include measuring the temperature of the PV device 101 as it entersthe temperature control chamber 1000 at step 1001, using, for example, aradiation pyrometer and comparing the measured temperature to a firstpredetermined setpoint temperature at step 1002, controlling thetemperature of the PV device to the first predetermined setpointtemperature at step 1003, electrically biasing the PV device 101 at step1004, cooling the PV device 101 to a second predetermined setpointtemperature at step 1005, and removing the electrical bias at step 1006.Electrical biasing at step 1004 of the photovoltaic device may beginduring any portion of step 1003, and may stop during any portion of step1005.

As shown in FIG. 11, the temperature control chamber 1000 can controlthe temperature of the PV device 101 in a plurality of phases; forexample, a hot phase at step 1003 and a cool phase at step 1005. Duringthe hot phase, the temperature of the PV devices 101 is controlled inorder to reach and maintain the temperature of the PV devices 101 at afirst setpoint temperature, for example, between about 100° C. and about160° C. The first setpoint temperature can be as high as possible, beingonly limited by the temperature that the materials, for example, theinterlayer 138 material described in connection with FIG. 3, cansustain. During the hot phase, the temperature control chamber 1000 canincrease, decrease, and/or maintain the temperature of the PV devices101 based on the measured temperature of the PV devices 101 as itentered the temperature control chamber 1000 in step 1001 and the firstsetpoint temperature. The desired temperature can be achieved byadjusting the position and/or power to heat source 600, or the positionof insulator 700, operated by the control system 905 (FIG. 8) and theactuator 900 (FIGS. 9 and 10). For example, during the hot phase, thetemperature control chamber 1000 can increase or decrease thetemperature of the PV devices 101 at a rate of up to about 10° C./min,and maintain a device temperature of about 130° C. The rate of increaseor decrease in the temperature of the PV devices 101 can be a constantor variable rate. The hot phase may last for a period of up to about 5minutes, or any other suitable time period depending on thespecifications of the materials of the PV devices 101. The electricalbiasing at step 1004 can take place in whole or in part during the hotphase.

Before the electrical biasing at step 1004 is completed, the cool phaseat step 1005 may take place. During the cool phase, the temperaturecontrol chamber 1000 cools the PV devices 101. The desired PV device 101temperature can be achieved by adjusting the position and power to heatsource 600, the position of insulator 700, or the position and power tocooling source 800. For example, the temperature control chamber 1000can cool the PV devices 101 at a rate of between about 5° C./min andabout 30° C./min, to reach a second setpoint temperature of betweenabout 80° C. and about 100° C., for example. The rate of cooling can bea constant or variable rate. The cool phase may last for a period of upto about 5 minutes, or any other suitable time period depending on thethermal specifications of PV devices 101 and/or the maximum thermalstress that the PV devices 101 materials can withstand. For example,once the cool phase is completed, electrical biasing can be stopped.

FIG. 12 illustrates a temperature profile which can be used in chamber1000 according to an exemplary embodiment. The temperature control canconsist of increasing the temperature of one or more PV devices 101within temperature control chamber 1000, for example at a constant rateof about 0° to about 10° C./min, to a temperature (T_(max)), when anelectrical bias pulse of a predetermined voltage and current is appliedto one or more PV devices 101. The temperature of a PV device 101 canthen be held at that temperature for a period of time (t_(hold)), whilebiasing is applied. Before the biasing is completed, a PV device 101 canbe cooled at a constant rate, for example, about 5° to about 30° C./min,to reach a temperature (T_(end)), over a period of time (t_(cool)). Thebias pulse ends at the temperature T_(end). The temperature T_(max) can,for example, be in the range of about 100° to about 160° C. Thetemperature T_(end) can, for example, be in the range of about 80° toabout 100° C. The time t_(hold) can, for example, be about 4 minutes,and the time t_(cool) can, for example, be about 3 minutes.

FIG. 13 illustrates another embodiment of the temperature controlchamber 1000. The temperature control chamber 1000 of FIG. 13 is thesame as that of FIGS. 8-10, except that the heat source 600 is locatedbelow the PV device 101 and the conveyor 500. The insulator 700 can belocated above the PV device 101, and can be positioned to face, and/orcontact, the PV device 101, similar to the heat source 600 describedwith respect to FIGS. 8-10. Heat source 600 and insulator 700 can bemovable by respective actuators, as described above. Electrical biasingcan be applied by biasing tool 415 in the manner as that described withreference to FIGS. 5A-B and 7.

FIG. 14 illustrates another embodiment of the temperature controlchamber 1000. The temperature control chamber 1000 of FIG. 14 is thesame as that of FIGS. 8-10, except that the heat source 600 includes twoor more heater panels 601, 602 located above and below the PV device101, respectively. Heater panel 601 can be operated the same as the heatsource 600 described with respect to FIG. 8, and raised or loweredrelative to, and/or placed in contact with, the PV device 101. Heaterpanel 602 can be raised and lowered and placed as close as possible tothe conveyor 500 without restricting its movement. Insulators 700, asshown in FIG. 9, may be located above heater panel 601 and/or belowheater panel 602, and can be movable by an actuator, as described above.Electrical biasing can be applied by biasing tool 415 in the manner asthat described with reference to FIGS. 5A-B and 7.

A number of embodiments of the invention have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the invention. Itshould also be understood that the appended drawings are not necessarilyto scale, presenting a somewhat simplified representation of variouspreferred features illustrative of the basic principles of theinvention.

What is claimed is:
 1. A method for conditioning a photovoltaic deviceduring manufacture comprising: controlling the temperature of thephotovoltaic device according to a temperature profile; and applying anelectrical bias to the photovoltaic device having the controlledtemperature.
 2. The method of claim 1, wherein the temperature profilecomprises at least one hot phase and at least one cool phase.
 3. Themethod of claim 1, the step of controlling the temperature of thephotovoltaic device according to a temperature profile furthercomprising: heating the photovoltaic device to a first temperature; andcooling the photovoltaic device to a second temperature, wherein theelectrical bias is removed when the photovoltaic device reaches thesecond temperature.
 4. The method of claim 1, wherein the step ofcontrolling the temperature of the photovoltaic device according to atemperature profile comprises: maintaining a temperature of thephotovoltaic device at a first temperature while applying an electricalbias.
 5. The method of claim 1, wherein the step of controlling thetemperature of the photovoltaic device according to a temperatureprofile comprises: applying convective or conductive heat to thephotovoltaic device.
 6. The method of claim 1, wherein the step ofcontrolling the temperature of the photovoltaic device according to atemperature profile comprises: controlling a temperature of thephotovoltaic device at a first temperature between about 100° C. andabout 160° C. while applying the electrical bias to the photovoltaicdevice; and controlling the temperature of the photovoltaic device at asecond temperature between about 80° C. and about 100° C.
 7. The methodof claim 6, further comprising: removing the electrical bias to thephotovoltaic device when the temperature of the photovoltaic devicereaches the second temperature.
 8. The method of claim 1, wherein thestep of controlling the temperature of the photovoltaic device accordingto a temperature profile comprises: adjusting the temperature of thephotovoltaic device at a rate of about 0°-10° C./min, to achieve atleast a portion of the temperature profile.
 9. The method of claim 1,wherein the step of controlling the temperature of the photovoltaicdevice according to a temperature profile comprises: decreasing thetemperature of the photovoltaic device at a rate of about 5°-30° C./min,to achieve at least a portion of the temperature profile.
 10. The methodof claim 1, wherein the step of controlling the temperature of thephotovoltaic device according to a temperature profile comprises:controlling the position or the power to a heat source.
 11. The methodof claim 1, wherein the step of controlling the temperature of thephotovoltaic device according to a temperature profile comprises:controlling the position or the power to a cooling source.
 12. Themethod of claim 1, wherein the step of controlling the temperature ofthe photovoltaic device according to a temperature profile comprises:controlling the position of an insulator.
 13. The method of claim 1,further comprising: laminating the photovoltaic device before applyingan electrical bias to the photovoltaic device having the controlledtemperature.
 14. A method for conditioning a photovoltaic device duringmanufacture comprising: controlling the temperature of the photovoltaicdevice according to a temperature profile; and applying an electricalbias to the photovoltaic device having the controlled temperature,wherein the temperature profile has at least one cool phase and at leastone hot phase, and removing the electrical bias when the temperatureprofile is complete.
 15. The method of claim 14, wherein applying anelectrical bias to the photovoltaic device having the controlledtemperature takes place during at least a portion of the hot phase. 16.The method of claim 14, wherein the temperature profile comprisesadjusting the temperature at a constant rate during at least a portionof one of the hot phase and the cool phase.
 17. The method of claim 14,further comprising laminating the photovoltaic device before applying anelectrical bias to the photovoltaic device having the controlledtemperature.
 18. The method of claim 14, wherein applying an electricalbias to the photovoltaic device having the controlled temperature is notcompleted until the completion of the cool phase.
 19. The method ofclaim 16, wherein the hot phase comprises: increasing or decreasing thetemperature of the photovoltaic device at a rate of about 0°-10° C./min.20. The method of claim 16, wherein the cool phase comprises: decreasingthe temperature of the photovoltaic device at a rate of about 5°-30°C./min.
 21. The method of claim 16, wherein adjusting the temperature ata constant rate during at least a portion of the hot phase comprises:controlling the position of or power to a heat source.
 22. The method ofclaim 16, wherein adjusting the temperature at a constant rate during atleast a portion of the cool phase comprises: controlling the position ofor power to a cooling source.